US5U3TR【PDF 1/4 页】MOSFET N-CH 30V 1.5A TUMT5

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US5U3

Transistors

2.5V Drive Nch+SBD MOSFET

US5U3

Structure

Silicon N-channel MOSFET /

Schottky barrier diode

Dimensions (Unit : mm)

TUMT5

2.0

1.3

Features

1) Nch MOSFET and schottky barrier diode

are put in TUMT5 package.

2) High-speed switching, Low On-resistance.

3) Low voltage drive (2.5V drive).

4) Built-in Low V F schottky barrier diode.

Applications

Switching

Package specifications

Inner circuit

Abbreviated symbol : U03

Type

Package

Code

Basic ordering unit (pieces)

Taping

TR

3000

(5)

(4)

US5U3

? 2

? 1

(1)Gate

(2)Source

(1) (2)

(3)

(3)Anode

Absolute maximum ratings (Ta=25 ° C)

<MOSFET>

? 1 ESD protection diode

? 2 Body diode

(4)Cathode

(5)Drain

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V DSS

V GSS

Limits

30

12

Unit

V

V

Drain current

Source current

(Body diode)

Continuous

Pulsed

Continuous

Pulsed

I D

I DP ? 1

I S

I SP ? 1

± 1.5

± 6.0

0.6

6.0

A

A

A

A

Power dissipation

Channel temperature

P D

Tch

? 2

0.7

150

W / ELEMENT

° C

? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%

? 2 Mounted on a ceramic board

<Di>

Parameter

Repetitive peak reverse voltage

Reverse voltage

Forward current

Symbol

V RM

V R

I F

Limits

25

20

0.7

Unit

V

V

A

Forward current surge peak

Power dissipation

Junction temperature

I FSM

P D

Tj

? 1

? 2

3.0

0.5

150

A

W / ELEMENT

° C

? 1 60Hz 1cycle

? 2 Mounted on ceramic board

Rev.B

1/3

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